GOALI/Spin Electronics: Development of ZnO Based Room Temperature Spintronics

Award Number: 224166

Program(s): ELECT, PHOTONICS, and DEVICE TEC, GRANT OPP FOR ACAD LIA W/INDUS

Start Date: 10/1/2002

Principal Investigator: Lu, Yicheng

Co-PI Name(s): Robert Bartynski

PI Email Address: ylu@ece.rutgers.edu

Abstract: 0224166

Lu

This proposal was received in response to the Spin Electronics for the 21st Century Initiative, Program Solicitation NSF 02-036. The proposal focuses on the study and development of metalorganic chemical vapor deposition (MOCVD) -grown transition metal (TM) -doped ZnO as a diluted magnetic semiconductor (DMS) layer, and explore its application through industrial collaborators, as well as government labs. This material offers the possibility of highly integrated device architecture along with the ability to manipulate carrier spin as well as charge. Practical application requires that the material have a magnetic Curie temperature above room temperature. While theoretical studies have identified GaN and ZnO as the most promising DMS materials in this regard, the high solubility of TM ions in ZnO, as well as its wide band gap (transparent!) its multifunctionality, and relatively low growth temperature make ZnO an excellent choice of room temperature spintronics material. To achieve their goals, they will focus on: A systematic study to develop low-pressure MOCVD technology for growth of TM-doped ZnO films. The most promising doping species are V, Co, Ni, and Mn, and R-Al2O3 is an optimal substrate; A coordinated characterization program using both in-house and synchrotron radiation based spectroscopic, imaging, and diffractive techniques to characterize the chemical, electronic, structural and magnetic properties of the MOCVD-grown TM-doped ZnO films; and through the industrial collaboration integrate the ZnO spin aligner layers with GaN LEDs to form the spin-polarized injection LED operational at room temperature.

The successful completion of the proposed research will have a significant impact on the scientific understanding and practical application of diluted magnetic semiconductor spintronics. It is anticipated that new phenomena related to spin-electronic, spin-magnetic, and spin-optical integration in wide band gap DMS materials will be discovered, leading to fundamentally new devices and applications.

New Jersey Math Science Partnership

Award Number: 226989

Program(s): MSP-COMPREHENSIVE AWARDS

Start Date: 10/1/2002

Principal Investigator: Firestone, William

Co-PI Name(s): Sharon Brendzel Deborah Cook Janet Caldwell William Cardone Larry Leverett

PI Email Address: wilfires@rci.rutgers.edu

Abstract: The New Jersey Math and Science Partnership (NJ-MSP) unites Rutgers, Rowan and Kean Universities with twelve school districts. Eight of the districts were among thirty plaintiffs in New Jersey's 20-year-long Abbott vs. Burke litigation, and have recently benefited from remedies ordered by the state Supreme Court. The twelve districts that come together within NJ-MSP are characterized as small- and medium-sized urban districts with poor, high-minority and low achieving student populations. The partners' schools enroll over 75,000 students of whom 27% are African American and 31% are Hispanic.

The goals of NJ-MSP are to:

1. Increase achievement and reduce achievement gaps in science and mathematics for all preK-12 students in partner school districts by (a) working to develop and implement strategic plans for each district; (b) working to develop internal leadership structures and practices to carry out the strategic plans; and (c) providing well-designed, continuing professional development.

2. Increase and sustain the number, quality and diversity of preK-12 teachers of mathematics and science in partner school districts by (a) providing potential teachers with experiences that will help them see teaching as an attractive career; (b) improving preservice teachers' content knowledge by reshaping university math and science courses; and (c) carrying out induction programs for new middle and high school teachers.

3. Document outcomes by (a) analyzing changes in student achievement and (b) documenting project activities.